Graphene Nanostructures, Fabrication, Physics and Devices.
ORAL
Abstract
We propose to construct nanoelectronic circuits by directly tailoring graphite, and demonstrate the feasibility of this idea by fabricating specially designed multi-terminal graphene patterns down to a minimum strip width of 50 nm. Electron tunneling measurement confirms the formation of quasi-one-dimensional subbands due to the effect of quantum size confinement. This new approach would in the future provide an efficient way of producing numerous layers of identical graphene nanoelectronic circuits.
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Authors
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C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
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C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
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C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
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S. P. Liu
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C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.
-
C. Z. Gu
- Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
- Department of Electronics, Peking University, Beijing 100871, China.
- Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.