Sensitivity of 1/f Noise to Chemical Constituents in Pentacene Thin Film Transistors

This study systematically investigates the sensitivity threshold of 1/f noise for use as a device diagnostic tool, with pentacene thin-film transistors (TFTs) as a model. When pentacene in TFTs was mixed with an incremental series of the oxidative impurity 6,13-pentacenequinone (PQ), 1/f noise power rose proportionate to increasing impurities with a preliminary sensitivity threshold of $\geq$ 0.6 $\%$ PQ, coupled with a decreasing hole mobility. The result and further theoretical interpretation can supplement current quality assessments and help better understand the innate deficiencies in organic electronics, thus potentially improving their quality.