Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity

POSTER

Abstract

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulk-like systems is obtained by varying the width of the slab.

*This work is supported partially by the National Science Council, Taiwan under the grant numbers NSC 94-2112-M-009-019, NSC 94-2120-M-009-002 and NSC 94-2112-M-009-024.

Authors

  • Ying-Yen Liao

    • Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan

  • Yueh-Nan Chen

    • Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan

  • Der-San Chuu

    • Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan

  • Tobias Brandes

    • School of Physics and Astronomy, The University of Manchester P.O. Box 88, Manchester, M60 1QD, U.K.