Zero-field spin-splitting in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures

ORAL

Abstract

We have observed the beating Shubnikov-de Haas oscillations with respect to the zero-field spin splitting of 2DEG in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures. The spin-splitting energy was obtained about 9 meV from the beating SdH frequency derived by the non-linear curve fitting. A new mechanism ($\Delta _{C1}-\Delta _{C3}$ coupling) was proposed to describe the large spin splitting in wurtzite GaN, which is originated from the band folding effect and intrinsic wurtzite structure inversion asymmetry. The band-folding effect generates two conduction bands ($\Delta _{C1}$ and $\Delta _{C3})$, in which $p$-wave probability has tremendous change when $k_{z}$ approaches anti-crossing zone. The $\Delta _{C1}-\Delta _{C3}$ coupling can produce a spin-splitting energy much larger than traditional Rashba or Dresselhaus effects. This project is supported in parts by National Science Council, Core Facilities Laboratory in Kaohsiung-Pintung area, Taiwan (ROC).

Authors

  • Ikai Lo

  • M.H. Gau

  • W.T. Wang

  • J.K. Tsai

  • S.F. Tsay

  • J.C. Chiang

    • Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China.