Vibrational Lifetimes and Frequency-Gap Law of Hydrogen Bending Modes in Semiconductors

ORAL

Abstract

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law, i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multi-phonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

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Authors

  • Baozhou Sun

  • Gunter Luepke

    • Department of Applied Science, The College of William and Mary, Williamsburg, VA
    • Department of Applied Science, College of William and Mary
    • Department of Applied Science, the College of William and Mary
    • The College of William and Mary

  • G.A. Shi

  • M. Stavola

    • Department of Physics, Lehigh University
    • Lehigh University

  • Nageswara Sunkaranam

  • Sriram Dixit

    • Interdisciplinary Materials Science Program, Vanderbilt University

  • Norman Tolk

    • Department of Physics and Astronomy, Vanderbilt University
    • Vanderbilt University

  • Leonard Feldman

    • Department of Physics and Astronomy \& Interdisciplinary Materials Science Program, Vanderbilt University
    • Vanderbilt University
    • Department of Physics and Astronomy, Vanderbilt University
    • Department of Physics and Astronomy \& Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235