Simulation of self-organized evolution of patterned GaAs(001) surfaces during homo-expitaxial growth

POSTER

Abstract

We report on both physically based and phenomenological simulations for morphological evolution of patterned GaAs(001) surface during homo-epitaxial growth. We compare these simulations with the experimental observations of homo-epitaxial growth on substrates patterned with arrays of cylindrical pillars. Our atomic force microscope (AFM) characterization indicates that the pillars evolve in a self-organized manner, i.e. the shape evolution of the pillars seems to be insensitive to its initial diameter in the [-110] direction.

**This work is supported by the Laboratory for Physical Sciences and an NSF-MRSEC Grant No. DMR-0080008

Authors

  • Erin Flanagan

    • Department of Materials Science and Engineering, University of Maryland, College Park

  • Hung-Chih Kan

    • Department of Physics, University of Maryland, College Park and the Laboratory for Physical Sciences

  • Tabassom Tadayyon-Eslami

    • Department of Materials Science and Engineering, University of Maryland, College Park and the Laboratory for Physical Sciences

  • Subramaniam Kanakaraju

    • The Laboratory for Physical Sciences

  • Chris Richardson

    • The Laboratory for Physical Sciences

  • Raymond Phaneuf

    • Department of Materials Science and Engineering, University of Maryland, College Park and the Laboratory for Physical Sciences