Hysteresis in single-walled carbon nanotube field--effect transistors: Experiments, a model, and implications
POSTER
Abstract
Hysteresis in carbon nanotube FETs is understood to be due to charge injection from the nanotube to its surrounding dielectric. We present a simple yet effective model to understand and analyze this phenomenon, wherein the charge injection and its subsequent redistribution has been modeled as a series RC circuit. A set of experiments validates this model, and also fits previously published data by other groups. Our work provides an in-depth picture of the parameters, which play a crucial role in modifying the transfer characteristics in nanotube FETs under different experimental conditions.