Quantum Hall Effect in Graphene

ORAL

Abstract

We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge states (generated by the magnetic field) and Anderson-localized surface states (created by the presence of zig-zag edges) lead to edge reconstruction. As a consequence, the point contact tunneling on a graphene edge has a non-universal tunneling exponent, and the Hall conductivity is not perfectly quantized in units of $e^2/h$. We argue that the magneto-transport properties of graphene depend strongly on the strength of electron-electron interactions, the amount of disorder, and the details of the edges.

*A. H. C. N. was supported by the NSF grant DMR-0343790.

Authors

  • Antonio H. Casto Neto

    • Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, MA 02215, USA
    • Boston University
    • Department of Physics, Boston University
    • Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
  • Francisco Guinea

    • Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain
    • Inst de Ciencia de Materiales de Madrid (CSIC) Cantoblanco 28049 MADRID
    • Instituto de Ciencia de Materiales de Madrid, Spain
  • Nuno M.R. Peres

    • Universidade do Minho, Portugal