2D patterned ferromagnetic semiconductors for planar spintronics
ORAL
Abstract
Fabrication of III-Mn-V ferromagnetic semiconductors by way of Mn ion implantation followed by pulsed laser melting (II-PLM) allows for the unique possibility of lateral patterning using optical and e-beam lithography. We have performed II-PLM on resist patterned substrates to create isolated ferromagnetically active Ga$_{1-x}$Mn$_{x}$As regions embedded in a GaAs substrate. We have prepared a uniform Ga$_{1-x}$Mn$_{x}$As film as well as a sample patterned with an array of Mn$^{+}$-implanted 100$\mu $m x 100$\mu $m squares that covers the equivalent of one-quarter the sample. The saturation magnetization of the patterned sample reflects this one-quarter implant area, and both samples display a T$_{C}$ of $\sim $100 K suggesting a similar maximum Mn concentration. The electrical and magnetic properties of this and other lateral structures consisting of sub-micron spaced active regions will be presented. This work was supported by the U.S. Department of Energy under contract No. DE-AC02-05CH11231.
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