Fabrication of GaAs spin injection devices

ORAL

Abstract

We report on the progress towards fabrication of a ferromaget-GaInP(or AlGaAs)-GaAs devices. The devices are designed for use in future experiments to electrically detect, and spatially map spin accumulation in GaAs using a high sensitivity magnetic force microscope. The device consists of n-GaAs channel capped with a 3-5nm thick highly doped GaInP or AlGaAs layer. Both the GaAs channel and GaInP( or AlGaAs) layers are MBE grown. The ferromagnetic injector and detector are deposited ex-situ over the GaInP (or AlGaAs) barrier layer. We will discuss the electrical characteristics and transport behavior of the devices.

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Authors

  • Y. Jung

    • Physics department, Oho State University

  • O. Kwon

  • V. P. Bhallamudi

    • Physics department, Oho State University

  • R. Yu

    • Physics department, Oho State University

  • D. V. Pelekhov

    • Physics department, Oho State University

  • S. A. Ringel

    • Electrical and Computer Engineering, Oho State University

  • P. R. Berger

    • Electrical and Computer Engineering, Oho State University

  • P. C. Hammel

    • Physics Department, Ohio State University
    • Physics department, Oho State University
    • The Ohio State University