Electron transport properties in InAs ballistic devices

A ballistic rectifier is one of the applications using ballistic electron transport properties, and has been fabricated by using high quality compound semiconductor heterostructures. We have observed a rectification for the first time in InAs triangular anti-dot structures at 77K and room temperature [1]. InAs/AlGaSb heterostructures provide relatively long mean free path for ballistic electron transport because of its high carrier density (1.0 * 10$^{12}$ cm$^{-2}$ at 77K) and high electron mobility (200,000 cm$^{2}$/Vs at 77K). In the present report, we will focus on nonlinear electron transport properties in InAs asymmetric anti-dot structures as well as ballistic rectification effects at higher temperatures. In addition, the observed magnetotransport properties in the InAs ballistic rectifiers will be also presented at the conference. [1] M. Koyama et al., presented at the 14$^{th}$ Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors, 2005.