Atomic-resolution Inelastic Electron Tunneling Spectroscopy studies of doping dependence of electron-boson interaction in Bi-2212

ORAL

Abstract

Inelastic Electron Tunneling Spectroscopy(IETS) has been one of the most powerful tool to probe collective modes in the solids. We use the recently developed \textit{STM-based Atomic-resolution Inelastic Electron Tunneling Spectroscopy(IETS)} technique to study the doping dependence of the electron-boson interactions(EBI) in Bi-2212 high-Tc cuprates. According to our results, the distribution of the bosonic mode energy($\Omega$) does not change as doping level changes, while the gap distribution changes greatly. Also $\Omega$-maps show nano-scale disorder. We will discuss the possible origin of this doping independent EBI.

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Authors

  • Jinho Lee

    • Cornell University

  • K. McElroy

    • Lawrence Berkeley Laboratory

  • J. Slezak

    • Cornell University

  • K. Fujita

    • University of Tokyo, Japan

  • J.-X. Zhu

  • A.V. Balatsky

    • Los Alamos National Laboratory

  • S. Uchida

  • H. Eisaki

    • University of Tokyo, Japan

  • J.C. Davis

    • Cornell University