Electronic Structure of Ultra-thin Graphite

ORAL

Abstract

We report a high resolution angle resolved photoemission spectroscopy (ARPES) study on ultra-thin graphite samples, grown and characterized successfully in ultra-high-vacuum environment by a thermalization of SiC. We discuss similarities to and differences from the data obtained on bulk graphite. Notable differences include doping, electronic structure as a function of k$_{z}$ (momentum component perpendicular to graphene layer), line width, and substrate-induced features in ultra-thin graphite samples. We discuss the effects of grain boundaries, disorder, and symmetry breaking, as possible explanations of these differences.

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Authors

  • Gey-Hong Gweon

  • Elizabeth Rollings

  • Shuyun Zhou

    • University of California, Berkeley

  • Bongjin Mun

  • Alexei Fedorov

    • ALS, LBNL

  • P. N. First

  • W.A. de Heer

    • School of Physics, Georgia Tech

  • Alessandra Lanzara

    • University of California, Berkeley