Zero bias conductance peak in a gated quantum wire

ORAL

Abstract

Conductance measurements are reported for an 0.4 micron wide GaAs/AlGaAs quantum wire with 7 cross-channel gates. The device exhibited integral conductance steps, magnetoconductance plateaus in agreement with the multiprobe formula and a conductance feature at 0.65 2e$^{2}$/h. Differential conductance measurements down to 50 mK revealed a zero bias conductance peak that vanished with an in-plane field of 1 Tesla. The width of this peak was comparable to that reported in high mobility quantum point contacts.[1] At low conductances this device also exhibited single electron charging characteristic of a multiple quantum dot. Work at UIUC was supported by NSF ECS02-10447, ARO grant DAAH04-95-1-0618, NSF grant ECS 92-02294 and of JSEP grant N00014-90-J-1270.[1] S.M. Cronenwett, et. al., Phys. Rev. Lett \textbf{88}, 226805 (2002)

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Authors

  • R.W. Giannetta

  • T. Olheiser

    • Loomis Laboratory of Physics, U. of Illinois at Urbana-Champaign

  • M. Hannan

    • Maxim Integrated Products, Beaverton, Oregon

  • I. Adesida

    • Dept. of Electrical and Computer Engineering., U. of Illinois at Urbana-Champaign

  • M.R. Melloch

    • School of Electrical and Computer Engineering, Purdue University