Strong magnetoelectric effect in a Heusler alloy-based magnetic tunnel junction

ORAL

Abstract

We study the magnetoelectric property of the magnetic tunnel junction(MTJ) formed between the half-metallic Heusler alloy and $CoFe$ exchange ferromagnet. The MTJ thus fabricated has demonstrated a large magnetoresistance increase for the anti-parallel spin alignment. Remarkably, the system exhibits a zero-bias current for the anti-parallel spin alignment, while it is absent for the parallel alignment. We argue that this manifests the strong magneto-electric coupling present in the MTJ, which is strongly enhanced by the half-metallic nature of Heusler alloy. \\\\ $^*$This work was partially supported by The National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as one of The 21 Century Frontier Programs.

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Authors

  • K. Moon

    • Dept. of Physics and IPAP, Yonsei Univ., Seoul 120-749 Korea \& Dept. of Physics and Applied Physics, Yale Univ., New Haven, CT 06520
    • Dept. of Physics and IPAP, Yonsei Univ., Seoul 120-749, Korea \& Dept. of Physics and Applied Physics, Yale Univ., New Haven, CT 06520

  • Taewan Kim

  • Wanjun Park

    • Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea

  • Joonwon Rim

    • Dept. of Physics and IPAP, Yonsei Univ.