A 4.5 kbit molecular-electronic memory at 3x10$^{10}$ elements/cm$^{2}$

We present the fabrication of 4.5 kbit random access molecular-electronic memory devices. The devices are based on a two-dimensional crossbar architecture with the bottom electrode array fabricated by SNAP and consisting of 150 n-type Si nanowires at a pitch of 34 nm, while the top electrode array is metallic and consists of 30 wires at a pitch of 100 nm fabricated by e-beam lithography. The active layer consists of a monolayer of bi-stable [2]-rotaxane supramolecule prepared on a Langmuir-Blodgett trough and deposited between the top and bottom electrodes. As a result, each crossing point between the electrodes serves as an independently addressable molecular switch tunnel junction. A group of 64 randomly selected bits from each device was tested, revealing reliable point-addressability and multiple-cycle lifetimes for individual bits.