Focus Session: Electronic and Atomic Structures of Interfaces and Gate Stacks II

Presentations

• Interface phases and the future of the nanotransistor

  COFFEE_KLATCH · Invited

  March 24, 2005, 11:30 AM – March 24, 2005, 12:06 PM

  Authors

  • Marco Buongiorno Nardelli

    • NC State University
    • NCSU and ORNL
    • North Carolina State University

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• Defects at Si-SiO$_2$ and internal dielectric interfaces in high-k gate stacks for Si devices

  ORAL

  March 24, 2005, 12:06 PM – March 24, 2005, 12:18 PM

  Authors

  • Gerald Lucovsky

    • Dept. of Physics, North Carolina State Univ., Raleigh, NC

  • J.C. Phillips

    • Rutgers University

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• Ab-Initio Study of the Effect of Hydrogen and Point Defects on Arsenic Segregation at Si (100)/SiO2 Interfaces

  ORAL

  March 24, 2005, 12:18 PM – March 24, 2005, 12:30 PM

  Authors

  • Karthik Ravichandran

  • Wolfgang Windl

  • Tao Liang

    • Department of Materials Science and Engineering, The Ohio State University, 2041 College Rd., Columbus, OH, 43210

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• Interaction of Hydrogen with Silicon-Silicon Dioxide Interfaces

  ORAL

  March 24, 2005, 12:30 PM – March 24, 2005, 12:42 PM

  Authors

  • Renee M. Van Ginhoven

  • Harold P. Hjalmarson

    • Sandia National Laboratories

  • Peter A. Schultz

    • Sandia National Laboratories

  • Blair Tuttle

    • Penn State University Erie
    • Penn State Erie

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• Atomic structure of novel epitaxial oxide/semiconductor interfaces

  COFFEE_KLATCH · Invited

  March 24, 2005, 12:42 PM – March 24, 2005, 1:18 PM

  Authors

  • Susanne Stemmer

    • University of California, Santa Barbara

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• Electron Spin Resonance Observation of Si/Dielectric Interface Traps in Fully Processed Metal Gate Hafnium Oxide Field Effect Transistors

  ORAL

  March 24, 2005, 1:18 PM – March 24, 2005, 1:30 PM

  Authors

  • Thomas Pribicko

  • Jason Campbell

  • Patrick Lenahan

    • Penn State
    • Pennsylvania State University

  • Wilman Tsai

    • Intel Corp.
    • Intel Corporation

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• Paramagnetic Centers in Hafnium Oxide Films on Silicon

  ORAL

  March 24, 2005, 1:30 PM – March 24, 2005, 1:42 PM

  Authors

  • Jason Ryan

  • Jason Campbell

  • Thomas Pribicko

  • Patrick Lenahan

    • Penn State
    • Pennsylvania State University

  • John Conley

    • Sharp Labs

  • Wilman Tsai

    • Intel Corp.
    • Intel Corporation

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• Atomic-scale challenges in nano-MOSFETs: Gate dielectrics and device modeling

  COFFEE_KLATCH · Invited

  March 24, 2005, 1:42 PM – March 24, 2005, 2:18 PM

  Authors

  • Sokrates Pantelides

    • Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, and Oak Ridge National Laboratory, Oak Ridge, TN 37831
    • Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, and Solid State Division, Oak Ridge National Lab, Oak Ridge, TN
    • Vanderbilt University
    • Vanderbilt University, Nashville, TN 37235 and Oak Ridge National Laboratory, Oak Ridge, TN 37831
    • Dept. of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 and Oak Ridge National Laboratory, Oak Ridge, TN 37831

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• Nitrided hafnium silicates for gate dielectrics

  ORAL

  March 24, 2005, 2:18 PM – March 24, 2005, 2:30 PM

  Authors

  • Chang-gong Wang

  • Mohith Verghese

  • Eric Shero

  • Glen Wilk

    • ASM America, Inc.

  • Jan Willem Maes

  • W. Deweerd

    • IMEC

  • R. Opila

    • University of Delaware

  • J. Morais

    • Instituto de Fisica

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• Medium Energy Ion Scattering Study of Oxygen Diffusion-Reactions in High-k Dielectrics on Si

  ORAL

  March 24, 2005, 2:30 PM – March 24, 2005, 2:42 PM

  Authors

  • Lyudmila Goncharova

  • Dmitri Starodub

  • Robin Barnes

    • Rutgers University

  • E. Garfunkel

    • Rutgers University

  • Robin Barnes

    • Rutgers University

  • Gennadi Bersuker

  • Brendan Foran

  • Pat Lysaght

    • Sematech

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