NMR/NQR and disorder effects in URu$_2$Si$_2$

ORAL

Abstract

NMR experiments at ambient pressure in URu$_2$Si$_2$ demonstrate a linewidth enhancement effect at the hidden order transition temperature ($T_0$). We find that larger amounts of sample disorder appear to induce larger linewidth enhancement at $T_0$. We will present recent NMR and NQR experiments in oriented powder and single crystal samples of URu$_2$Si$_2$ and discuss the measurements with emphasis on a possible connection between linewidth/disorder effects and hidden order. Both NQR and NMR spectra as functions of temperature and NMR for different magnetic field strengths and orientations will be reported.

*Work supported by NSF/DMR-0203524

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Authors

  • O.O. Bernal

  • M.E. Moroz

    • Physics Department, California State University, Los Angeles CA 90032

  • K. Ishida

  • H. Murakawa

    • Graduate School of Science, Kyoto University, Kyoto, Japan

  • A.P. Reyes

  • P.L. Kuhns

    • National High Magnetic Field Lab, Tallahassee, Florida

  • D.E. MacLaughlin

    • University of California, Riverside, California

  • H.G. Lukefarh

    • Whittier College, Whittier, California

  • J.A. Mydosh

    • Max Planck Institute for Chemical Physics of Solids, Dresden, Germany

  • T.J. Gortenmulder

    • Kamerlingh Onnes Lab, Leiden University, The Netherlands

  • H. Amitsuka

    • Department of Physics, Hokkaido University, Sapporo, Japan