Focus Session: Electronic and Atomic Structure of Interfaces and Gate Stacks I
FOCUS · V14 ·
Presentations
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Current Schottky Barrier Concepts
COFFEE_KLATCH · Invited
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Authors
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Raymond Tung
- Department of Physics, Brooklyn College, City University of New York
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Interface band alignment in high-k gate stacks
ORAL
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Authors
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Bersch Eric
- Rutgers University
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P. Hartlieb
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S. Sayan
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R.A. Bartynski
- Rutgers University
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E. Garfunkel
- Rutgers University
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Surface States and rectification at a Metal high-k Dielectric Contact
ORAL
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Authors
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Alex Demkov
- Freescale Semiconductor, Inc.
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Metal screening for CMOS application through vacuum and interface work function ab-initio calculations: benefits and limitations
COFFEE_KLATCH · Invited
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Authors
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Leonardo Fonseca
- Freescale Semicondutores Brasil, Ltda
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Properties of interfaces between metals and binary oxides.
ORAL
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Authors
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Matias Nunez
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Marco Buongiorno Nardelli
- NC State University
- NCSU and ORNL
- North Carolina State University
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Bloch States of the Interface Phase
ORAL
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Authors
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Curt Billman
- Oak Ridge National Laboratory
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Fred Walker
- University of Tennessee
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Marco Buongiorno-Nardelli
- North Carolina State University
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Rodney McKee
- Oak Ridge National Laboratory
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Intrinsic limitations for gate stack applications of complex high-k oxides in advanced Si devices: band edge states
COFFEE_KLATCH · Invited
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Authors
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Gerald Lucovsky
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Optical properties and metrology of the high-k/Si interface
ORAL
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Authors
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Stefan Zollner
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Yong Liang
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David Theodore
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Z. Yu
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Dina Triyoso
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Jay Curless
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Clarence Tracy
- Freescale Semiconductor, Inc.
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Enhanced permittivity of the interfacial oxide in gate insulator stacks on silicon
ORAL
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Authors
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Alfredo Pasquarello
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Feliciano Giustino
- EPFL Lausanne (Switzerland)
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