Pressure-temperature magnetic phase diagram of Au$_4$V investigated by electrical resistivity using Designer Diamond Anvils
ORAL
Abstract
The electrical resistivity of Au$_4$V has been measured up to a pressure of 20~GPa between room temperature and 15~K. These measurements were performed using designer diamonds, which consist of lithographically deposited tungsten micro-leads embedded within a single crystal of diamond. The electrical resistivity of Au$_4$V has a kink in its slope at 45~K under ambient pressure, which is associated with a ferromagnetic transition. Designer diamonds can be used with a diamond anvil cell to track the pressure dependence of this ferromagnetic transition, which is found to increase under the application of pressure.
*This work was performed under the auspices of the U.S. Department of Energy by the University of California, Lawrence Livermore National Laboratory under Contract No. W-7405-Eng-48.
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