The electronic structure of boron doped diamond probed with XAS and XES

ORAL

Abstract

Diamond is an interesting candidate for ultraviolet light-emitting devices. Device fabrication properly doped thin films of diamond. The valence and conduction band electronic of boron-doped diamond (BDD) has been measured using soft x-ray emission (XES) and x-ray absorption spectroscopy (XAS). Local density approximation of the electronic structure were also performed, and are in general agreement with XES and XAS data. However, XAS reveals the existence of three doped states in the band , only one of which is predicted by theory. Further improvements in terms of chemical and inertness can be obtained by modifying the surface by insertion of fluorine. The of XES and XAS measurements of BDD and fluorinated BDD will be presented. The Boston University program is supported in part by the NSF under DMR 0311792.

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Authors

  • Per-Anders Glans

    • Boston University
    • Department of Physics, Boston University

  • Kevin E. Smith

    • Boston University
    • Department of Physics, Boston University

  • J. -H. Guo

    • Advanced Light Source, Lawrence Berkeley National Laboratory

  • M. Mattesini

    • Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Spain

  • R. Ahuja

    • Department of Physics, Uppsala University, Sweden

  • S. Ferro

    • Department of Chemistry, University of Ferrara, Italy

  • A. De Battisti

    • Department of Chemistry, University of Ferrara, Italy