Monte Carlo Simulations of Amorphous Silicon

POSTER

Abstract

A computational algorithm has been developed for simulating amorphous silicon. The algorithm employs a Monte Carlo bond switching scheme to anneal and cool the system without creating dangling bonds. A variety of topological parameters are examined as a function of simulation cell size.

*work supported by ACS Petroleum Research Fund

Authors

  • Dave Gilson

    • Penn State Erie
  • Blair Tuttle

    • Penn State University Erie
    • Penn State Erie