Experimental study of geometries to characterize spin-dependent reflection

Spin-orbit interaction in semiconductor heterostructures can lead to a spin-dependence of the reflection angle of carriers off a barrier. This effect can be exploited to create populations of spin-polarized carriers in ballistic mesoscopic geometries. We will describe experimental progress in developing sample geometries that can be used to characterize and utilize spin-dependent reflection. The geometries are fabricated by electron beam lithography on narrow gap heterostructures, InSb/InAlSb, in which spin-orbit interaction is strong. The geometries consist of an injector aperture that directs the carriers predominantly towards a barrier, and a second aperture in close proximity collecting the carriers as a function of an applied perpendicular magnetic field. We report on progress in optimizing the geometries for given heterostructures, and present a comparative study between heterostructures.