Nitride-Based Microelectronics

Presentations

• Toward a Self-Consistent Model of Carbon States, Semi-Insulating Conductivity and Yellow Luminescence in GaN:C Grown by Molecular Beam Epitaxy

  COFFEE_KLATCH · Invited

  March 23, 2005, 8:15 AM – March 23, 2005, 8:51 AM

  Authors

  • Steven Ringel

    • The Ohio State University

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• COFFEE_KLATCH · Invited

  March 23, 2005, 8:51 AM – March 23, 2005, 9:27 AM

  Authors

  • Umesh Mishra

    • University of California Santa Barbara

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• Dispersion in AlGaN/GaN HEMTs

  COFFEE_KLATCH · Invited

  March 23, 2005, 9:27 AM – March 23, 2005, 10:03 AM

  Authors

  • Robert Coffie

    • Northrop Grumman Space Technology, One Space Park D1/1050L, Redondo Beach, CA 90277

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• III-V Nitride Materials and Electron Devices

  COFFEE_KLATCH · Invited

  March 23, 2005, 10:03 AM – March 23, 2005, 10:39 AM

  Authors

  • Lester F. Eastman

    • Cornell University

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• Nitride semiconductor material growth by rf-MBE for electronic device applications

  COFFEE_KLATCH · Invited

  March 23, 2005, 10:39 AM – March 23, 2005, 11:15 AM

  Authors

  • David Storm

    • US Naval Research Laboratory

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