Focus Session: Magnetic Impurities in Semiconductors
FOCUS · L10 ·
Presentations
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Driving Mn into GaAs with an STM: Probing a Mn Acceptor
ORAL
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Authors
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Anthony Richardella
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Dale Kitchen
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Ali Yazdani
- Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign
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Controlling Interactions between Mn Acceptors in the GaAs (110) Surface
ORAL
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Authors
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Dale Kitchen
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Anthony Richardella
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Ali Yazdani
- Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign
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Mechanism for electric field driven single spin manipulation of a Mn dopant in GaAs
ORAL
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Authors
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Jian-Ming Tang
- University of Iowa
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Jeremy Levy
- Dept. of Physics and Astronomy, University of Pittsburgh
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
- University of Pittsburgh
- Surface Science Center, Center for Oxide Semiconductor Materials for Quantum Computation, Dept of Physics and Astronomy, Univ. of Pittsburgh
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Michael E. Flatt\'e
- University of Iowa
- Phyisics Dept., University of Iowa
- Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, IA 52242
- Optical Science and Technology Center and Department of Physics and Astronomy, University of Iowa, Iowa City, IA 52242
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Spatial structure of single and interacting Mn acceptors in GaAs
COFFEE_KLATCH · Invited
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Authors
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Paul Koenraad
- Eindhoven University of Technology
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The onset of Mn monomer and dimer adsorptions on GaAs(110)
ORAL
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Authors
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Jue-Xian Cao
- ICTS, Beijing, China
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Xin-Gao Gong
- Fudan University, China
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Lu Yu
- ICTS, Beijing, China
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Ruqian Wu
- University of California, Irvine
- UC Irvine
- Department of Physics and Astronomy, University of California, Irvine
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Luminescence properties of GaAs / AlGaAs quantum wells doped with Mn in the extreme dilution limit
ORAL
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Authors
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Mark White
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Pierre Petroff
- Materials Engineering Department, University of California, Santa Barbara
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Electronic states in Mn4+ ions in p-type GaN
ORAL
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Authors
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Bing Han
- Northwestern University
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Mel Ulmer
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Bruce Wessels
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SIC-LSD study of transition metal valencies in oxide materials
ORAL
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Authors
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Leon Petit
- Oak Ridge National Laboratory
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T. C. Schulthess
- Oak Ridge National Laboratory
- Computer Science and Mathematics Div., Oak Ridge National Laboratory
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Axel Svane
- Aarhus University, DK
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Anderson Janotti
- Oak Ridge National Laboratory
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Zdzislawa Szotek
- Daresbury Laboratory, UK
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Walter Temmerman
- Daresbury Laboratory, UK
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Diluted Magnetic Semiconductors based on Cr-doped InN
ORAL
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Authors
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Rekha Rajaram
- 1,2
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Andreas Ney
- 1,2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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R.F.C. Farrow
- 2
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J.S. Harris, Jr.
- 1
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Stuart Parkin
- IBM Almaden Research Center
- 2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Influence of Mn Distribution on Ferromagnetism in Magnetic Semiconductor Mn$_x$Ge$_{1-x}$
ORAL
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Authors
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A.P. Li
- Oak Ridge National Laboratory
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C. Zeng
- The University of Tennessee
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L.C. Feldman
- Vanderbilt University
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J.F. Wendelken
- Oak Ridge National Laboratory
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N. Rao
- Vanderbilt University
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J. Shen
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H.H. Weitering
- Oak Ridge National Laboratory and The University of Tennessee
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Above Room Temperature Ferromagnetism in Mn-implanted Si
ORAL
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Authors
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Martin Bolduc
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Chaffra Awo-Affouda
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Andy Stollenwerk
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MengBing Huang
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Frank Ramos
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Vincent P. LaBella
- College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York
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Electronic structure and magnetic properties of transition-metal doped Bi$_{2}$Te$_{3}$, Bi$_{2}$Se$_{3}$, and Sb$_{2}$Te$_{3}$ for diluted magnetic semiconductors
ORAL
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Authors
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Paul Larson
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Walter Lambrecht
- Department of Physics, Case Western Reserve University, 10900 Euclid Ave, Cleveland, OH 44106
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