Focus Session: Strained Si and Other Semiconductors for Device Applications
FOCUS · J15 ·
Presentations
-
Straining Si on Insulator
COFFEE_KLATCH · Invited
–
Authors
-
Qi Xiang
- AMD
-
-
Surface Roughness and Dislocation Distribution in Compositionally Graded Relaxed SiGe Buffer Layer with Inserted Strained Si Layers
ORAL
–
Authors
-
Tae-Sik Yoon
-
Jian Liu
-
Ya-Hong Xie
- Department of Materials Science and Engineering, University of California Los Angeles
- Department of Materials Science and Engineering, University of California at Los Angeles, Box 951595, Los Angeles, California 90095-1595
-
-
Ultra-thin ambipolar germanium on insulator field effect transistors
ORAL
–
Authors
-
D. Kazazis
-
B. R. Perkins
-
A. Zaslavsky
- Division of Engineering, Brown University
-
E. J. Preisler
-
N. A. Bojarczuk
-
S. Guha
- IBM T. J. Watson Research Laboratory
-
-
Defect-Free Strained Si-on-Insulator Structures
ORAL
–
Authors
-
G. M. Cohen
-
P.M. Mooney
-
V. Paruchuri
-
J.O. Chu
- IBM T.J. Watson Research Center
-
H. Chen
- IBM Microelectronics Division
-
-
Mechanical Stability of Ultra Thin Ge/Si Film on SiO$_2$:the Effect of Si/SiO$_2$ Interface
ORAL
–
Authors
-
Minghuang Huang
- University of Utah
-
John A. Nairn
- University of Utah
-
M.G. Lagally
- University of Wisconsin-Madison
-
Feng Liu
- Univesity of Utah
- Department of Material Science and Engineering, University of Utah, Salt Lake City, UT 84112
- Univesity of utah
- University of Utah
-
-
PECVD growth of SiGe layers for high speed devices and MEMS.
ORAL
–
Authors
-
Srinivasan Kannan
- University of Utah
-
David Allred
- Brigham Young University.
-
P. Craig Taylor
- University of Utah
- University of Utah, Department of Physics
-
-
The Technology of Strained Si on Insulator
COFFEE_KLATCH · Invited
–
Authors
-
George Celler
- Soitec USA
-
-
Defect reduction in HgCdTe layers by MBE growth on CdTe mesas
ORAL
–
Authors
-
Ramana Bommena
- University of Illinois Chicago
-
Chad Fulk
-
Jun Zhao
-
Tae Lee
-
Sivalingam Sivananthan
-
-
Low Temperature Epitaxial Growth of Antimony Doped Silicon for Broadband Astronomical Charge-Coupled Devices
ORAL
–
Authors
-
Michael Hoenk
-
Jordana Blacksberg
-
Shouleh Nikzad
- Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA
-
Steve Holland
- Lawrence Berkeley National Laboratory, Berkeley, CA
-
-
Dislocations in Ge/Si$_{1-x}$Ge$_x$ films: atomistic simulations and elastic-theory calculations
ORAL
Authors
-
Francesco Montalenti
-
Anna Marzegalli
-
Leo Miglio
- INFM and LNESS, Materials Science Department, University of Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy)
-