Silicon light emission from {113} rodlike defects

ORAL

Abstract

We studied the electroluminescence of p-n junction Si LEDs in correlation with the type of implant-induced defects formed during the post implant anneal. The LEDs were fabricated by boron implantation at an energy of 30 keV with a dose of 1.0 x 10$^{15}$ cm$^{-2}$ into an n-type Si substrate. By varying the post implant annealing conditions to tune the type of defects and by using plan-view transmission electron microscopy to identify them, we found that {\{}113{\}} rodlike defects precipitated along the $<$110$>$ Si before the formation of dislocation loops are the light-emitting centers of the p-n junction Si LEDs. The peak intensity of electroluminescence from {\{}113{\}} rodlike-defect-engineered LEDs is about twenty-five times higher than that from dislocation-loop-engineered LEDs. This finding, for the first time, is highly significant in the development of high efficient defect engineered Si LEDs for all optic monolithic Si microphotonics.

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Authors

  • Grant Z Pan

    • Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095

  • Roman Ostroumov

    • Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectionics-FENA, University of California at Los Angeles

  • Yaguang Lian

    • Microfabrication Laboratory, University of California at Los Angeles, Los Angeles, CA 90095

  • K. N. Tu

    • Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095.

  • Kang L Wang

    • University of California Los Angeles
    • Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectonics - FENA, University of California at Los Angeles
    • Device Research Laboratory, and MARCO Focus Center on Functional Engineered Nano Architectionics-FENA, University of California at Los Angeles