Focus Session: Dilute Nitride Semiconductors: From Atoms to Devices I
FOCUS · H15 ·
Presentations
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Quasi-localized states, electron scattering and carrier mobility in GaNAs
COFFEE_KLATCH · Invited
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Authors
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Stephen Fahy
- Tyndall National Institute and Department of Physics, University College Cork, Ireland.
- Tyndall National Institute and Department of Physics, University College Cork, Ireland
- Tyndall National Institute, Ireland
- Tyndall National Institute and Department of Physics, University College Cork
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Influence of Nitrogen Incorporation Mechanisms on Optical and Electronic Properties of GaAsN Alloys
ORAL
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Authors
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M. Reason
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H.A. McKay
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W. Ye
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D. Mao
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R.S. Goldman
- Dept. of Materials Science and Engineering, Univ. of Michigan
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X. Bai
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C. Kurdak
- Dept. of Physics, Univ. of Michigan
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V. Rotberg
- Dept. of Nuclear Engineering and Radiological Sciences, Univ. of Michigan
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Two-Dimensional Electron Transport in Selectively Doped GaAsN/AlGaAs Heterostructures
ORAL
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Authors
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X. Bai
- Department of Physics
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H.A. McKay
- Department of Material Science and Engineering
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R.S. Goldman
- The University of Michigan
- University of Michigan
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136
- Program in Applied Physics, Department of Material Science and Engineering
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C. Kurdak
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109
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Localization and exciton line-width broadening in the dilute nitride, GaNAs
ORAL
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Authors
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Dermot McPeake
- Tyndall National Institute, University College Cork, Ireland
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Ivana Bosa
- Tyndall National Institute, University College Cork, Ireland
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Andrew Lindsay
- Tyndall National Institute, University College Cork, Ireland
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Stephen Fahy
- Tyndall National Institute and Department of Physics, University College Cork, Ireland.
- Tyndall National Institute and Department of Physics, University College Cork, Ireland
- Tyndall National Institute, Ireland
- Tyndall National Institute and Department of Physics, University College Cork
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Eoin P. O'Reilly
- Tyndall National Institute, University College Cork, Ireland
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The unusual band structure properties of dilute nitride GaAsN alloys
COFFEE_KLATCH · Invited
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Authors
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Amalia Patane
- School of Physics and Astronomy, University of Nottingham
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Excited states of acceptor-like excitons bound to isolated nitrogen in GaAs
ORAL
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Authors
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D.J. Wolford
- Department of Physics and Microelectronics Research Center, Iowa State University
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E.A. Stinaff
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K.W Ver Steeg
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Tyson D. Hoffmann
- Iowa State
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Planar modulation of the conduction band edge in GaNxAs1-x
ORAL
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Authors
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Kirstin Alberi
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O.D. Dubon
- Dept. Materials Science, Univ. of California and Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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A. Minor
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W. Shan
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K.M. Yu
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W. Walukiewicz
- Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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S.J. Chung
- Univ. of California, Berkeley, CA 94720
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D.E. Mars
- Agilent Laboratories, Palo Alto, CA 94304
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F. Zavaliche
- Dept. of Materials Science, Univ. of California, Berkeley, Ca 94720 and M.R.S.E.C., Univ. of Maryland, College Park, MD 20742
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Electron Transport in Dilute Alloys of GaAs(1-x)N(x)
ORAL
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Authors
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Richard Ahrenkiel
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Joseph Luther
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Steven Johnston
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Wyatt Metzger
- National Renewable Energy Laboratory
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Dilute GaAs-Nitride Alloys Grown with Bismuth by MBE
ORAL
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Authors
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D. A. Beaton
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T. Tiedje
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S. Tixier
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S. E. Webster
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N. R. Zangenberg
- Physics and Astronomy
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E. C. Young
- Materials Engineering, University of British Columbia, Vancouver, BC
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P. Wei
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F. Schiettekatte
- Departement de Physique, Universite de Montreal , Montreal, PQ
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S. Francoeur
- National Renewable Energy Lab, Golden, CO
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Role of Nitrogen on Emission Wavelengths of InAs Quantum Dots: InAs/GaAs Interfaces and Strain-compensating GaAsN Burying Layers
ORAL
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Authors
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I. Suemune
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S. Ganapathy
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K. Uesugi
- Hokkaido Univ
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N. Matsumura
- RIKEN
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Y. Nabetani
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T. Matsumoto
- Yamanashi Univ
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