Focus Session: Magnetic Tunnel Junctions I
FOCUS · D43 ·
Presentations
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Tunneling magnetoresistance oscillation effect in double-barrier magnetic tunnel junctions
COFFEE_KLATCH · Invited
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Authors
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Xiu-Feng Han
- Institute of Physics, CAS
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Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films
ORAL
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Authors
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Zhong-Yi Lu
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Xiao-Guang Zhang
- Oak Ridge National Laboratories
- Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Sokrates Pantelides
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, and Oak Ridge National Laboratory, Oak Ridge, TN 37831
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, and Solid State Division, Oak Ridge National Lab, Oak Ridge, TN
- Vanderbilt University
- Vanderbilt University, Nashville, TN 37235 and Oak Ridge National Laboratory, Oak Ridge, TN 37831
- Dept. of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 and Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Spin transport in nanowires with a double-junction
ORAL
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Authors
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Ildar Sabirianov
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Andrei Sokolov
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Jody Redepenning
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Bernard Doudin
- University of Nebraska
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Bias voltage dependence of the tunneling magneto-resistance of SrTiO3 based magnetic tunnel junctions grown epitaxially on Si (100)
ORAL
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Authors
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Guenole Jan
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Mahesh Samant
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Andreas Ney
- 1,2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Kevin Roche
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Stuart Parkin
- IBM Almaden Research Center
- 2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Probing Spin-Polarized Tunneling at High Bias with a Magnetic Tunnel Transistor
ORAL
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Authors
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B.G. Park
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T. Banerjee
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B.C. Min
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J.C. Lodder
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R. Jansen
- MESA+ Institute for Nanotechnology, University of Twente, The Netherlands
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Spin polarized tunneling at finite bias
ORAL
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Authors
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Sergio O. Valenzuela
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D.J. Monsma
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C.M. Marcus
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V. Narayanamurti
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M. Tinkham
- Physics Department, Harvard University
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Bias and temperature dependence on junction magnetoresistance in manganite/magnetite based magnetic tunnel junctions
ORAL
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Authors
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Rajesh Chopdekar
- Cornell Univ.
- Applied Physics, Cornell University
- School of Applied Physics, Cornell Univ.
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Guohan Hu
- Hitachi Global Storage Technologies
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Yuri Suzuki
- UC-Berkeley
- Materials Science, UC Berkeley
- Dept. of Materials Science and Engineering, UC Berkeley
- Dept. of Materials Science \& Eng., UC Berkeley
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Characterization of Magnetic Tunnel Junctions by IETS and STS
ORAL
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Authors
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Hyunsoo Yang
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Christian Kaiser
- Stanford University
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See-Hun Yang
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Stuart Parkin
- IBM
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Nanoscale magnetic tunnel junctions
ORAL
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Authors
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Kirill Bolotin
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Abhay Pasupathy
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Ferdinand Keummeth
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Daniel C. Ralph
- Cornell University
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Fluctuations, dissipation, and switching in tunneling spin-transfer devices
ORAL
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Authors
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Yaroslaw Bazaliy
- IBM Almaden Research Center, 650 Harry Rd., San Jose, CA
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Konstantin Matveev
- Argonne National Lab
- Materials Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne IL
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Perpendicularly magnetized exchange-biased magnetic tunnel junctions
ORAL
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Authors
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Andreas Ney
- 1,2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Sebastiaan van Dijken
- Department of Physics, Trinity Collge, Dublin 2, Ireland
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Stuart Parkin
- IBM Almaden Research Center
- 2
- IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Negative TMR in Magnetic Tunneling Junctions with Zr oxide barrier
ORAL
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Authors
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Takahiro Moriyama
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Weigang Wang
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Xiaohai Xiang
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John Xiao
- University of Delaware
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Tao Zhu
- Chinese Academy of Science
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Fei-fei Li
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Jun Du
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Ming-wen Xiao
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Zheng-zhong Li
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An Hu
- Nanjing University
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Spin Transport via Nanoscale Ferromagnet/Superconductor Hybrid Tunnel Junctions
ORAL
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Authors
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Dawei Wang
- University of California, Irvine
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Manjiang Zhang
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Go Tateishi
- University of Southern California
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Robert Mueller
- Juelich Institute
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Gerd Bergmann
- University of Southern California
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Jia G. Lu
- University of California, Irvine
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