Copper-Phthalocyanine Field-Effect Transistor with a Low Driving Voltage

Copper-phthalocyanine-thin-film metal-insulator-semiconductor field-effect transistors operating with a low driving voltage have been fabricated by using a PbZr$_{0.5}$Ti$_{0.5}$O$_{3}$ film as a high permittivity insulator layer ($\varepsilon $=500). A field-effect mobility of about 0.017 cm$^{2}$/Vs and an ON/OFF ratio of more than 10$^{3}$ were obtained at gate voltage of - 2V and drain-source voltage of - 1V. This demonstrates operation of a p-type copper-phthalocyanine transistor with a driving voltage low enough for actual device applications.