Carbon Nanotube Gated Lateral Resonant Tunneling Field-Effect Transistor

Carbon nanotubes have generated a great deal of interest for use in novel devices due to their small size and high current densities. We have produced a new type of lateral resonant tunneling field-effect transistor using a Y-junction multiwalled carbon nanotube as the dual gate on a narrow wire etched from a modulation-doped GaAs/AlGaAs heterostructure. The two branches of the Y-junction nanotube produced in an alumina nanotemplate array \footnote{Li, J., Papadopoulos, C. and Xu, J. M., ``Growing Y- Junction Carbon Nanotubes" Nature 402, 253-254, 2000.} are used as gates to produce a voltage-tunable double-barrier potential for the carriers traveling from source to drain along the wire. The three terminal I-V characteristics of the device have been measured at 4.2K. Conductance oscillation is observed as a function of dual gate potential, indicating electron resonant tunneling through the energy states between the barriers. Detailed measurement and comparison with self-consistent potential simulations will be presented.