Failure Modes in Carbon Nanotube Devices

ORAL

Abstract

We study the electrical breakdown of multiwall carbon nanotube transistor devices. Electrical transport measurements are preformed in a transmission electron microscope, allowing real-time nanometer scale imaging of device breakdown. Failure modes are correlated to changes in nanotube device behavior.

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Authors

  • Steve Konsek

    • MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720
    • MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Shaul Aloni

    • Molecular Foundry MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Brian Christopher Regan

    • MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720

  • Alex Zettl

    • University of California, Berkeley
    • Department of Physics, Department of Materials Science and Engineering, UC Berkeley; Materials Sciences Division, LBNL; Berkeley, CA 94720
    • Physics department, University of California at Berkeley
    • Department of Physics, UC Berkeley, and Materials Sciences Division, LBNL, Berkeley, California 94720
    • Physics Department, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley CA 94720
    • University of California-Berkeley
    • MSD, LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720
    • MSD,LBNL, Berkeley, Caifornia 94720 and Dept. of Physics, UC Berkeley, California, 94720