Fabrication of a Ferromagnetic Semiconductor Spin Bipolar Transistor

ORAL

Abstract

We have fabricated a spin bipolar transistor that uses a bilayer of the ferromagnetic semiconductor Ga$_{(1-x)}$Mn$_{(x)}$As to provide a tunneling magnetoresistance (TMR) element in the emitter of the device. The two magnetic layers have a different manganese concentration that gives differing coercive fields and Curie temperatures. This allows the two magnetic layers to be set in parallel or anti-parallel configurations at low temperatures. TMR is clearly observed, and transistor action confirmed in the electrical characteristics of the device.

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Authors

  • Mark Field

  • Bobby Brar

  • Brian Pierce

    • Rockwell Scientific

  • Chad Gallinat

  • D.D. Awschalom

    • University of California Santa Barbara
    • Department of Physics, University of California, Santa Barbara, CA 93106
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106

  • Art Gossard

    • UCSB
    • University of California at Santa Barbara
    • University of California, Santa Barbara
    • Materials and ECE Departments, UCSB

  • James Speck

    • University of California Santa Barbara