Plasma Etching III
ORAL · GR3 · ID: 3430258
Presentations
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Plasma sheath tailoring for advanced 3D plasma etching: the effects of mask geometry, etching materials, and ion energy.
ORAL
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Publication: Jüngling et al. Appl. Phys. Lett. 12 February 2024; 124 (7): 074101.
Presenters
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Elia Jüngling
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
Authors
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Elia Jüngling
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Meret Nürnberg
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Gerardo Emiliano Gutierrez Alvarez
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Marc Böke
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Achim von Keudell
- Experimental Physics II, Ruhr-University Bochum, Bochum, GERMANY
- Experimental Physics II - Reactive Plasmas, Ruhr University Bochum, Germany
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Deep Potential Molecular Dynamics Simulations of Ion-Enhanced Etching of Silicon by Atomic Chlorine
ORAL
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Presenters
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Andreas Kounis-Melas
- Princeton University
Authors
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Andreas Kounis-Melas
- Princeton University
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Athanassios Z Panagiotopoulos
- Princeton University
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David Barry Graves
- Chemical & Biological Engineering Princeton University
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Atomic layer etching of sputter-deposited AlN in Cl2-Ar plasmas
ORAL
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Presenters
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Iurii Nesterenko
- Silicon Austria Labs GmbH; Ruhr-University Bochum
Authors
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Iurii Nesterenko
- Silicon Austria Labs GmbH; Ruhr-University Bochum
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Jon Farr
- Applied Materials, Inc.
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Steffen Harzenetter
- Applied Materials, Inc.
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Dmytro Solonenko
- Silicon Austria Labs GmbH
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Benjamin Kalas
- Silicon Austria Labs GmbH
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Thang Dao
- Silicon Austria Labs GmbH
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Julian Schulze
- Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany
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Nikolai Andrianov
- Austria Labs GmbH
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Modeling and optimization of plasma chemical etching of polysilicon in HBr/Cl2 mixture with data-driven approaches
ORAL
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Presenters
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Fedor V Oksanichenko
- Moscow Institute of Physics and Technology
Authors
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Fedor V Oksanichenko
- Moscow Institute of Physics and Technology
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Alexander Efremov
- JSC MERI
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The effect of quenching process for the argon excited states in plasma etching
ORAL
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Presenters
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Lu Wang
- Harbin Institute of Technology
Authors
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Lu Wang
- Harbin Institute of Technology
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Ion Energy Distribution Function (IEDF) Simulation Applicable to Customized Bias Voltage Waveform
ORAL
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Presenters
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HyeonHo Nahm
- Hanyang University
Authors
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HyeonHo Nahm
- Hanyang University
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Chin-Wook Chung
- Department of electrical engineering, Hanyang University, Seoul, Korea1
- Hanyang University
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