Bias waveform adjustment to substrate for mono-energetic ion energy distribution
POSTER
Abstract
A mono-energetic ion energy distribution has a narrow the angular distribution of ions, for resulting in vertical etching profile. For the mono energetic ion energy distribution, a feedback system between ion density and the applied voltage waveform is developed. When applying a waveform to the substrate, the potential of the substrate increases due to the increase in ion flux to the substrate which leads to a broaden the ion energy distribution. The substrate potential increase depends on the incident ion flux. Therefore, the ion flux is measured with a probe and the waveform is adjusted. Through this feedback mono energetic ion energy distribution can be achieved.
*This work was supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program-Public-private joint investment semiconductor R&D program(K-CHIPS) to foster high-quality human resources) (RS-2023-00236642, Development of etching process and diagnostic technology using precursor with low GWP for next generation semiconductor process) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea)(1415187459)
Presenters
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Dong Min Kim
- Hanyang University