Plasma Etching
FOCUS · ER2 · ID: 550099
Presentations
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Low Bias Frequencies for High Aspect Ratio Plasma Etching
ORAL
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Presenters
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Evan Litch
- University of Michigan
Authors
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Evan Litch
- University of Michigan
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Hyunjae Lee
- Mechatronics Research, Samsung Electronics Co.
- Mechatronics Research, Samsung Electronics Co., Ltd.,
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Sang Ki Nam
- Mechatronics Research, Samsung Electronics Co.
- Mechatronics Research, Samsung Electronics Co., Ltd.,
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Mark J Kushner
- University of Michigan
- Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109-2122, United States of America
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Effects of the focus ring on uniformity in capacitively coupled plasma etching reactors
ORAL
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Presenters
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Fang-Fang Ma
- Dalian University of Technology
Authors
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Fang-Fang Ma
- Dalian University of Technology
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Quan-Zhi Zhang
- Dalian University of Technology
- Dalian University of Technology, China
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Jing-Yu Sun
- Dalian University of Technology
- Dalian University of Technology, China
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You-Nian Wang
- Dalian University of Technology
- Dalian University of Technolpgy
- Dalian University of Technology, China
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Development of validated fluorocarbon plasma chemistry for multi-dimensional modeling of semiconductor plasma etch processes
ORAL · Invited
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Publication: D. Levko, C. Shukla, R. R. Upadhyay, and L. L. Raja, J. Vac. Sci. Technol. B 39, 042202 (2021)
D. Levko, C. Shukla, and L. L. Raja, J. Vac. Sci. Technol. B 39, 062204 (2021)Presenters
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Dmitry Levko
- Esgee Technologies
Authors
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Dmitry Levko
- Esgee Technologies
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Development of virtual metrology using plasma information to predict mask shape in HAR etch process
ORAL
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Presenters
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Jaemin Song
- Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
Authors
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Jaemin Song
- Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Namjae Bae
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Jihoon Park
- Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Taejun Park
- Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea
- Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea
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Ji-Won Kwon
- Department of Energy Systems Engineering, Seoul National University, Soeul, South Korea
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Sangwon Ryu
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Ingyu Lee
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Gon-Ho Kim
- Department of Energy Systems Engineering, Seoul National University, Seoul 08826, Korea
- Department of Energy Systems Engineering, Seoul National University, Seoul, South Korea
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Electron-assisted photoresist etching in an inductively coupled oxygen plasma via low-energy electron beam
ORAL
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Presenters
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Jiwon Jung
- Hanyang university
- Hanyang University
Authors
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Jiwon Jung
- Hanyang university
- Hanyang University
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Chin-Wook Chung
- Hanyang university
- Hanyang University
- Hanyang Univ
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Ar plasma nanostructuring of PTFE for the wettability transition from hydrophobic to superhydrophobic and hydrophilic surfaces
ORAL
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Publication: [1] V. Pachchigar, U.K. Gaur, A. T. V., S. K. P., S. Hans, S.K. Srivastava, M. Ranjan, Hydrophobic to superhydrophobic and hydrophilic transitions of Ar plasma-nanostructured PTFE surfaces, Plasma Process. Polym. n/a (2022) e2200037. doi:https://doi.org/10.1002/ppap.202200037.
[2] V. Pachchigar, M. Ranjan, K.P. Sooraj, S. Augustine, D. Kumawat, K. Tahiliani, S. Mukherjee, Self-cleaning and bouncing behaviour of ion irradiation produced nanostructured superhydrophobic PTFE surfaces, Surf. Coatings Technol. 420 (2021) 127331. doi:https://doi.org/10.1016/j.surfcoat.2021.127331.Presenters
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Vivek Pachchigar
- Institute for Plasma Research, Bhat
Authors
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Vivek Pachchigar
- Institute for Plasma Research, Bhat
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Umesh K Gaur
- Institute for Plasma Research
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Sooraj K. P.
- Institute for Plasma Research
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Sukriti Hans
- Institute for Plasma Research
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Mukesh Ranjan
- Institute for Plasma Research
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Achieving selective etching of SiN and SiO<sub>2</sub> over amorphous carbon during CF<sub>4</sub>/H<sub>2</sub> by controlling substrate temperature
ORAL
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Presenters
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Shih-Nan Hsiao
- Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.
- Nagoya University
- Nagoya Univ
Authors
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Shih-Nan Hsiao
- Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.
- Nagoya University
- Nagoya Univ
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Thi-Thuy-Nga Nguyen
- Nagoya University
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Takayoshi Tsutsumi
- Nagoya University
- Nagoya Univ
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Kenji Ishikawa
- Nagoya Univ
- Nagoya University
- Nagoya University, Japan
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Makoto Sekine
- Nagoya University
- Nagoya Univ
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Masaru Hori
- Nagoya Univ
- Nagoya University
- Center for Low-temperature Plasma Sciences, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.
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