Development of flat cutoff probe for real-time electron density measurement
POSTER
Abstract
As the semiconductor process, real-time in-situ plasma diagnostics have received attractive attention because they are expected to perform important functions such as increasing the process yield and abnormality detection. In this study, we developed a bar type flat cutoff probe (BCP) [1-3] embedded in the surface of the chamber wall and electrode to measure electron density during plasma processing. The BCP measures electron density near the plasma-sheath boundary, which is very closely adjacent to the chamber wall or wafer. Also, BCP can measure the electron density in real-time even though various types of wafers are placed on the BCP. In addition, we developed a circuit model of the BCP in which plasma and sheath are considered as coplanar capacitances. The result of the circuit model was verified through both the EM simulation and the experiment.
*This research was supported by the Material Innovation Program (Grant No. 2020M3H4A3106004), the R&D Convergence Program (Grant No. CAP- 17–02-NFRI-01/CRC-20–01-NFRI) and the Korea Research Institute of Standards and Science (Grant No. KRISS GP2020–0009-03).
Publication:[1] H. J. Yeom, J. H. Kim, D. H. Choi, E. S. Choi, M. Y. Yoon, D. J. Seong, Shin Jae You, and Hyo-Chang Lee, Flat cutoff probe for real-time electron density measurement in industrial plasma processing, Plasma Sources Sci. Technol. 29 (2020) 035016 (13pp) [2] Hyo-Chang Lee, Jung Hyung Kim, Dae, Daejin Seong, Hee Jung Yeom, PLANAR-TYPE PLASMA DIAGNOSIS APPARATUS, WAFER-TYPE PLASMA DIAGNOSIS APPARATUS IN WHICH PLANAR-TYPE PLASMA DIAGNOSIS APPARATUS IS BURIED, AND ELECTROSTATIC CHUCK IN WHICH PLANAR-TYPE PLASMA DIAGNOSIS APPARATUS IS BURIED, Korea Patent. 10-2020-0095022 , PCT Patent. PCT/KR2019/004500, US Patent. 17050373, China Patent. 201980028803.9, EU Patent. 19912976.8, Japan Patent. 52002369478 [3] Hyo-Chang Lee, Jung Hyung Kim, Dae, Hee Jung Yeom, Device for measuring plasma ion density and Apparatus for plasma diagnostics using the same, Korea Patent. 1020210038119, US Patent. 17222937, China Patent. 2021110374496.9, EU Patent. EP21167098.9, Japan Patent. 2021-062613
Presenters
Hee Jung Yeom
Korea Research Institute of Standards and Science (KRISS)
Korea Research Institute of Standard and Science
Authors
Hee Jung Yeom
Korea Research Institute of Standards and Science (KRISS)
Korea Research Institute of Standard and Science
Jung Hyung Kim
Korea Research Institute of Standards and Science
Korea Research Institute of Standard and Science (KRISS)
Korea Research Institute of Standards and Science (KRISS)
Korea Research Institute of Standard and Science
DaeHan Choi
Korea Research Institute of Standards and Science (KRISS)
Eunseok Choe
Korea Research Institute of Standards and Science (KRISS)
Korea Research Institute of Standards and Science
Min Young Yoon
Korea Research Institute of Standards and Science (KRISS)
Dae Jin Seong
Korea Research Institute of Standards and Science (KRISS)
Gwangho You
Korea Research Institute of Standards and Science (KRISS)
Shin Jae You
Chungnam Natl Univ
Department of Physics, Chungnam National University
Hyo-Chang Lee
Korea Research Institute of Standards and Science
Korea Research Institute of Standards and Science (KRISS)
