Measurements of material induced effects on the plasma parameters of an inductively coupled plasma.

O2 planar inductively coupled plasmas (ICP) exhibit a characteristic heating mode within the E-H transition that exudes qualities of the gamma like heating mode of a RF CCP. The material selection for the grounded surface of a plasma has the ability to influence the duration of this heating mode via the oxygen recombination probability. Differing sets of thin metal films were exposed to a constantly running plasma eliminating possibility of interexperiment contamination. The material changes presented show a change in electron density rise time, steady state electron density, plasma potential, and electron temperatures in pulsed a planar ICP.