Plasma Materials I

Presentations

• Multi-Fluid and PIC Simulation of Ion Energy Distributions through Different Aspect Ratio Holes in Capacitively Coupled Plasma

  ORAL

  Oct. 29, 2019, 10:00 AM – Oct. 29, 2019, 10:15 AM

  Authors

  • Yao Du

    • North Carolina State University

  • Yuhua Xiao

    • North Carolina State University

  • Steven Shannon

    • North Carolina State University

  • Sang Ki Nam

    • Samsung Electronics Co., Ltd.

  View abstract →

• Pattern Dependent Profile Distortion in High Aspect Ratio Plasma Etching of SiO$_{\mathrm{2}}$ and SiO$_{\mathrm{2}}$-Si$_{\mathrm{3}}$N$_{\mathrm{4}}$-SiO$_{\mathrm{2}}$ Stacks

  ORAL

  Oct. 29, 2019, 10:15 AM – Oct. 29, 2019, 10:30 AM

  Authors

  • Shuo Huang

    • U. Michigan

  • Sang Ki Nam

    • Samsung Electronics Co.

  • Seungbo Shim

    • Samsung Electronics Co.

  • Mark J. Kushner

    • U. Michigan
    • University of Michigan

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• Modeling and controlling of defect generation in electronic devices during plasma etching processes---an optimization methodology of plasma-induced damage

  COFFEE_KLATCH · Invited

  Oct. 29, 2019, 10:30 AM – Oct. 29, 2019, 11:00 AM

  Authors

  • Koji Eriguchi

    • Kyoto University

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• Why does an SF$_{\mathrm{6}}$ plasma etch silicon much faster than any other fluorine atom generating plasma?

  ORAL

  Oct. 29, 2019, 11:00 AM – Oct. 29, 2019, 11:15 AM

  Authors

  • Vincent M Donnelly

    • University of Houston

  • Priyanka Arora

    • University of Houston

  • Tam Nguyen

    • University of Houston

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• High-aspect-ratio organic-pattern formation with self-limiting manner by controlling plasma process based on substrate temperature measurement.

  ORAL

  Oct. 29, 2019, 11:15 AM – Oct. 29, 2019, 11:30 AM

  Authors

  • Makoto Sekine

    • Nagoya University

  • Yusuke Fukunaga

    • Nagoya University

  • Takayoshi Tsutsumi

    • Nagoya University

  • Kenji Ishikawa

    • Nagoya University

  • Hiroki Kondo

    • Nagoya University

  • Masaru Hori

    • Nagoya University

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• On finding low Global Warming Potential (GWP) precursor for SiO$_{\mathrm{2}}$ etching through plasma radical measurement

  ORAL

  Oct. 29, 2019, 11:30 AM – Oct. 29, 2019, 11:45 AM

  Authors

  • Chul Hee Cho

    • Chungnam National University

  • SiJun Kim

    • Chungnam National University, Nanotech Optoelectronics Research Center

  • JangJae Lee

    • Chungnam National University

  • YeongSeok Lee

    • Chungnam National University

  • SangHo Lee

    • Chungnam National University

  • InHo Seong

    • Chungnam National University

  • ShinJae You

    • Chungnam National University

  View abstract →

• Student Excellence Award Finalist: Computational study on the formation of Nickel hexafluoroacetylacetonate complexes Ni(hfac)$_{\mathrm{2}}$ on a rough NiO surface during thermal atomic layer etching (ALE) Processes

  ORAL

  Oct. 29, 2019, 11:45 AM – Oct. 29, 2019, 12:00 PM

  Authors

  • Abdulrahman Basher

    • Osaka University

  • Marjan Krstic

    • Karlsruhe Institute of Technology (KIT)

  • Michiro Isobe

    • Osaka University

  • Tomoko Ito

    • Osaka University

  • Karin Fink

    • Karlsruhe Institute of Technology (KIT)

  • Masato Kiuchi

    • National Institute of Advanced Industrial Science and Technology (AIST)

  • Kazuhiro Karahashi

    • Osaka University

  • Takae Takeuchi

    • Nara Women's University

  • Wolfgang Wenzel

    • Karlsruhe Institute of Technology (KIT)

  • Satoshi Hamaguchi

    • Osaka University

  View abstract →