Modeling of Plasma Etching
FOCUS · ET2 ·
Presentations
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Profile Control Using Pulsed Power During Plasma Etching in Capacitively Coupled Plasmas
ORAL
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Authors
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Sang-Heon Song
- University of Michigan
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Mark J. Kushner
- University of Michigan
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Insights into Plasma Etch Profile Evolution with 3D Profile Simulation
ORAL
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Authors
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Saravanapriyan Sriraman
- Lam Research
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Alex Paterson
- Lam Research
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Yiting Zhang
- University of Michigan
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Mark J. Kushner
- University of Michigan
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Multi Time-Step Feature Scale Simulations with FPS3D
ORAL
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Authors
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Paul Moroz
- Tokyo Electron U.S. Holdings, Inc.
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Daniel Moroz
- University of Pennsylvania
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Modeling of plasma-induced damage during the etching of ultimately-scaled transistors in ULSI circuits---A model prediction of damage in three dimensional structures
COFFEE_KLATCH · Invited
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Authors
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Koji Eriguchi
- Kyoto University
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Molecular dynamics analysis of silicon chloride ion incidence during Si etching in Cl-based plasmas: Effects of ion incident energy, angle, and neutral radical-to-ion flux ratio
ORAL
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Authors
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Nobuya Nakazaki
- Kyoto University
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Koji Eriguchi
- Kyoto University
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Kouichi Ono
- Kyoto University
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