Plasma Processing for Photovoltaic Applications

Presentations

• Effect of radical density for high rate deposition of microcrystalline silicon film in UHF and RF hybrid PECVD

  ORAL

  Oct. 8, 2010, 8:30 AM – Oct. 8, 2010, 8:45 AM

  Authors

  • Youn J. Kim

    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University

  • Yoon S. Choi

    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University
    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746, Republic of Korea

  • In S. Choi

    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University
    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746, Republic of Korea

  • Jeon G. Han

    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University
    • Sungkyunkwan University
    • Center for Advanced Plasma Surface Technology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746, Republic of Korea

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• Control of Microcrystalline Silicon Deposition by RF Waveform Tailoring

  ORAL

  Oct. 8, 2010, 8:45 AM – Oct. 8, 2010, 9:00 AM

  Authors

  • Erik Johnson

    • LPICM-CNRS

  • Jean-Paul Booth

    • LPP-CNRS

  • Jean-Charles Vanel

    • LPCIM-CNRS

  • Thomas Verbeke

    • LPP

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• SiH$_{4}$ and SiF$_{4}$ dissociation in MDECR plasmas and consequences for material properties

  ORAL

  Oct. 8, 2010, 9:00 AM – Oct. 8, 2010, 9:15 AM

  Authors

  • Samir Kasouit

    • Total Gas \& Power, 2 Place Jean Millier, 92078 Paris La D\'efense Cedex, France

  • Pavel Bulkin

    • LPICM, Ecole polytechnique, Palaiseau 91128 France
    • LPICM, Ecole Polytechnique, 91128 Palaiseau Cedex, France

  • Laurent Kroely

    • LPICM, Ecole Polytechnique, 91128 Palaiseau Cedex, France

  • Pere Roca i Cabarrocas

    • CNRS/Ecole Polytechnique
    • LPICM, Ecole Polytechnique, 91128 Palaiseau Cedex, France
    • LPICM, Ecole Polytechnique

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• High rate and high yield silicon deposition under mesoplasma condition for a next generation Siemens technology

  ORAL

  Oct. 8, 2010, 9:15 AM – Oct. 8, 2010, 9:30 AM

  Authors

  • Makoto Kambara

    • Department of Materials Engineering, The University of Tokyo

  • Junichi Fukuda

    • Department of Materials Engineering, The University of Tokyo

  • Sudong Wu

    • Department of Materials Engineering, The University of Tokyo

  • Liwen Chen

    • Department of Materials Engineering, The University of Tokyo

  • Toyonobu Yoshida

    • Department of Materials Engineering, The University of Tokyo

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• Measurement of surface loss probabilities of hydrogen radicals in plasma-enhanced Si CVD process for solar cell

  ORAL

  Oct. 8, 2010, 9:30 AM – Oct. 8, 2010, 9:45 AM

  Authors

  • Yusuke Abe

    • Nagoya University

  • Keigo Takeda

    • Nagoya University

  • Kenji Ishikawa

    • Nagoya University

  • Hiroki Kondo

    • Nagoya University

  • Makoto Sekine

    • Nagoya University, JST-CREST

  • Masaru Hori

    • Nagoya University, JST-CREST

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• Plasma Modeling of Microcrystalline Silicon Thin Film Deposition Process

  ORAL

  Oct. 8, 2010, 9:45 AM – Oct. 8, 2010, 10:00 AM

  Authors

  • Dimitrios Mataras

    • Plasma Technology Lab., Dpt. of Chem. Engineering, University of Patras

  • Eleftherios Amanatides

    • Plasma Technology Lab., Dpt. of Chem. Engineering, University of Patras

  • Spyridon Sfikas

    • Plasma Technology Lab., Dpt. of Chem. Engineering, University of Patras

  • Aurel Salabas

    • OC Oerlikon Solar, Trubbach, Switzerland CH-9477

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