Generation of nitridated silicon particles and their thin film deposition using double multi-hollow discharges

Semiconductor nanocrystals have attracted much attention as materials for multiple-exciton generation (MEG) photovoltaics. Surface modification of such nanocrystals is important to make quantum well structure for efficient MEG as well as to extract photo-generated carriers from nanocrystals. In this study, nitridated silicon particles were produced by SiH$_{4}$/H$_{2}$/N$_{2}$ PECVD, where generation of silicon particles and their surface nitridation were independently controlled using two multi-hollow discharges. Thin films of nitridated silicon particles were deposited by controlling the N$_{2}$ flow rate. We observed strong photoluminescence (PL) emission in an energy range of 2.0 to 2.3 eV from the thin film, which may be explained by a quantum-confinement effect of silicon particles embedded in the thin film.