Plasma Etching I

Presentations

• Synchronized pulsed plasmas: potential process improvements for patterning technologies

  COFFEE_KLATCH · Invited

  Oct. 5, 2010, 8:30 AM – Oct. 5, 2010, 9:00 AM

  Authors

  • Olivier Joubert

    • Laboratoire des Technologies de la Micro\'electronique, CNRS
    • CNRS

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• Synchronous Plasma Pulsing for Etch Applications

  ORAL

  Oct. 5, 2010, 9:00 AM – Oct. 5, 2010, 9:15 AM

  Authors

  • M. Haass

    • CNRS-LTM

  • M. Darnon

    • CNRS-LTM

  • E. Pargon

    • CNRS-LTM

  • S. Banna

    • Applied Materials

  • O. Joubert

    • CNRS-LTM

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• The Etch Step in MEMS Deep Silicon Etch

  ORAL

  Oct. 5, 2010, 9:15 AM – Oct. 5, 2010, 9:30 AM

  Authors

  • Iqbal Saraf

    • UT Dallas

  • Matthew Goeckner

    • UT Dallas
    • UTD
    • University of Texas at Dallas

  • Lawrence Overzet

    • UT Dallas
    • UTD
    • University of Texas at Dallas

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• Dual-RF-Mode Inductively Coupled Plasma (ICP) Source for Advanced Dry Etching Processes

  ORAL

  Oct. 5, 2010, 9:30 AM – Oct. 5, 2010, 9:45 AM

  Authors

  • Samer Banna

    • Applied Materials Inc.

  • Ankur Agarwal

    • Applied Materials Inc.

  • Valentin Todorow

    • Applied Materials Inc.

  • Shahid Rauf

    • Applied Materials
    • Applied Materials Inc.

  • Ken Collins

    • Applied Materials
    • Applied Materials Inc.

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• Analysis of gallium nitride (GaN) surface interacted with chlorine etching plasma beams

  ORAL

  Oct. 5, 2010, 9:45 AM – Oct. 5, 2010, 10:00 AM

  Authors

  • Shang Chen

    • Nagoya University

  • Ryosuke Kometani

  • Kenji Ishikawa

  • Hiroki Kondo

  • Keigo Takeda

  • Hiroki Kano

  • Yutaka Tokuda

  • Makoto Sekine

  • Masaru Hori

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• Deep Gallium Nitride Etching

  ORAL

  Oct. 5, 2010, 10:00 AM – Oct. 5, 2010, 10:15 AM

  Authors

  • Julien Ladroue

    • GREMI - STMicroelectronics
    • GREMI

  • Mohamed Boufnichel

    • STMicroelectronics

  • Thomas Tillocher

    • GREMI

  • Philippe Lefaucheux

    • GREMI

  • Pierre Ranson

    • GREMI

  • R\'emi Dussart

    • Universite d'Orleans
    • GREMI

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• Anisotropic Cl$_{2}$-based ICP etching of III-Vs with the addition of Si-containing gases

  ORAL

  Oct. 5, 2010, 10:15 AM – Oct. 5, 2010, 10:30 AM

  Authors

  • L. Gatilova

  • S. Bouchoule

  • G. Patriarche

  • S. Guilet

    • CNRS-LPN

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