Materials Processing
FOCUS · TR1 ·
Presentations
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Reaction mechanisms in patterning complex oxide materials by plasmas
COFFEE_KLATCH · Invited
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Authors
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Jane P. Chang
- University of California, Los Angeles
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Surface Modification of Polymer Photoresists in Fluorocarbon Plasma Etching
ORAL
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Authors
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Mingmei Wang
- Iowa State University
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Mark Kushner
- University of Michigan
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Factors Affecting the Sealing Efficiency of Low-$k$ Dielectric Surface Pores Using Successive He and Ar/NH$_{3}$ Plasma Treatment
ORAL
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Authors
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Juline Shoeb
- Iowa State University
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Mark Kushner
- University of Michigan
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The influence of He plasma pretreatment on O and H atom interaction with low-k nanoporous materials
ORAL
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Authors
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O.V. Braginsky
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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A.S. Kovalev
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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D.V. Lopaev
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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E.M. Malykhin
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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Yu. A. Mankelevich
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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T.V. Rakhimova
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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A.T. Rakhimov
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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A.N. Vasilieva
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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S.M. Zyryanov
- Nuclear Physics Institute, Moscow State University, Moscow, Russia
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M.R. Baklanov
- IMEC, Leuven, Belgium
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Investigation of the etching mechanisms of Ar/Cl$_{2}$/O$_{2}$ inductively coupled plasmas on silicon by means of modelling and experiments
ORAL
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Authors
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Stefan Tinck
- University of Antwerp
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Development and validation of a C5F8/Ar/O2 mixture chemistry model using quantum chemistry methods
COFFEE_KLATCH · Invited
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Authors
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Song-yun Kang
- Tokyo Electron Ltd.
- Tokyo Electron Ltd
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