Computational Methods for Plasmas
FOCUS · WF3 ·
Presentations
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Numerical Simulation on the Profile of Plasma and Radicals in Plasma Chambers
COFFEE_KLATCH · Invited
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Authors
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Ikuo Sawada
- Tokyo Electron Limited
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ABSTRACT WITHDRAWN
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Quantitative improvement in MD-based plasma etching simulator: Si etching by halogen-including plasmas
ORAL
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Authors
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Hiroaki Ohta
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Tatsuya Nagaoka
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Akira Iwakawa
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Koji Eriguchi
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Kouichi Ono
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Finite volume formulation of low-temperature plasma equations and numerical solution in one dimension
ORAL
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Authors
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Mirko Vukovic
- Tokyo Electron, U. S. Holdings
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3-Dimensional Modeling of Capacitively and Inductively Coupled Plasma Etching Systems
COFFEE_KLATCH · Invited
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Authors
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Shahid Rauf
- Applied Materials, Inc.
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Prediction of SiO$_{2}$ etching profile under the presence of RIE-lag effect
ORAL
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Authors
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Takashi Yagisawa
- Keio University
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Toshiaki Makabe
- Keio University
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