Materials Processing in Low Pressure Plasmas II: Etching, deposition, new materials
FOCUS · VF1 ·
Presentations
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Reaction of Fluorocarbon Species with Si and SiO$_{2}$ Surfaces
COFFEE_KLATCH · Invited
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Authors
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Hirotaka Toyoda
- Nagoya University
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Modeling high aspect ratio contact etch of SiO$_{2}$
ORAL
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Authors
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Phillip Stout
- Applied Materials
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Time dependence analysis of the 3D profile charging during $SiO_2$ etching in $Ar^{+}$/$CF_4$ plasma
ORAL
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Authors
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Branislav Radjenovic
- Vinca Institute of Nuclear Science
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Marija Radmilovic-Radjenovic
- Institute of Physics
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Zoran Petrovic
- Institute of Physics
- Institute of Physics Belgrade, Serbia
- Institute of Physics, Belgrade
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Plasma Modeling for Cu barrier/seed applications
ORAL
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Authors
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Prashanth Kothnur
- Novellus Systems, Inc.
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Ananth Bhoj
- Novellus Systems, Inc.
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Ron Kinder
- Novellus Systems, Inc.
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Spatial distributions of Cu particulates in high-pressure magnetron sputtering plasmas studied by laser light scattering
ORAL
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Authors
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N. Nafarizal
- Nagoya University, University Tun Hussein Onn Malaysia
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N. Takada
- Nagoya University
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K. Sasaki
- Plasma Nanotechnology Research Center, Nagoya University
- Nagoya University
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M. Ikeda
- Canon ANELVA Corporation
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Y. Sago
- Canon ANELVA Corporation
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Multi-hollow discharge plasma CVD reactor with magnets for highly stable a-Si:H film deposition
ORAL
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Authors
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Kazunori Koga
- Kyushu University
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William M. Nakamura
- Kyushu University
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Hiroshi Satou
- Kyushu University
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Hiroomi Miyahara
- Kyushu University
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Masaharu Shiratani
- Kyushu University
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Control of structures of Carbon Nanowalls in plasma enhanced CVD
ORAL
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Authors
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Wakana Takeuchi
- Nagoya. Univ.
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Yutaka Tokuda
- Aichi Inst. Tech.
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Mineo Hiramatsu
- Meijo Univ.
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Hiroyuki Kano
- NU-Eco Eng
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Masaru Hori
- Nagoya Univ.
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