Material Processing in Low Pressure Plasmas
FOCUS · RR1 ·
Presentations
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The Role of Plasma Science in Materials Processing
COFFEE_KLATCH · Invited
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Authors
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Michael Barnes
- Intevac, Inc.
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Spatial and temporal structure of a sheath formed in a 300 mm, dual-frequency capacitive argon discharge
ORAL
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Authors
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Ed Barnat
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Paul Miller
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Greg Hebner
- Sandia National Laboratories
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Alex Paterson
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John Holland
- Applied Materials
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Study of Nano-Contact Etching Characteristics Using C6F6 Gas.
ORAL
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Authors
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Jong-Woo Sun
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Sung-Chan Park
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Chul Ho Shin
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Chang Jin Kang
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Han Ku Cho
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Joo Tae Moon
- Process Development Team, Semiconductor R\&D Center, Samsung Electronics
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Etching of high-$k$ HfO$_{2}$ films in high-density chlorine-containing plasmas without rf biasing
ORAL
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Authors
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Kouichi Ono
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Keisuke Nakamura
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Daisuke Hamada
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Kazushi Osari
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Koji Eriguchi
- Kyoto University
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Study on the characteristics of etching organic hard mask for patterning high aspect ratio contact holes
ORAL
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Authors
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Hyun-Sil Hong
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Sung-Il Cho
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Mi-Na Choi
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Chang-Jin Kang
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Han-Ku Cho
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Joo-Tae Moon
- Samsung Electronics
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Low-pressure Plasma Fluorination of Polypropylene
ORAL
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Authors
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Yang Yang
- Iowa State University
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Mark Strobel
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Seth Kirk
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Hyacinth Cabibil
- 3M Company
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Mark J. Kushner
- Iowa State University
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A modeling of inductively coupled plasma in SF$_{6}$/O$_{2}$ for deep reactive ion etching of silicon
ORAL
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Authors
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Toshikazu Sato
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Toshiaki Makabe
- Keio Univ.
- Keio University
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