Etching Mechanisms
ORAL · UH1 ·
Presentations
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Profile simulation of high-aspect-ratio contact etching including charging effect
ORAL
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Authors
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Seokhyun Lim
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Yongjin Kim
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Yero Lee
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Taikyung Kim
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Gyung-Jin Min
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Chang-Jin Kang
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HanKu Cho
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Joo-Tae Moon
- Samsung Electronics Co., Ltd.
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A self-consistent modeling of feature profile evolution under competition between etching and deposition
ORAL
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Authors
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Takashi Shimada
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Takashi Yagisawa
- Keio University
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Toshiaki Makabe
- Keio University
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Development of Nano-Contact Etch Process Using New Gas Chemistry.
ORAL
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Authors
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Jong-Woo Sun
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Chul-Ho Shin
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Gyung-Jin Min
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Chang-Jin Kang
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HanKu Cho
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Joo-Tae Moon
- Samsung Electronics Co., Ltd.
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Etching of high-$k$ and metal gate materials in high-density chlorine-containing plasmas
ORAL
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Authors
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Kouichi Ono
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Keisuke Nakamura
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Kazushi Osari
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Tomohiko Kitagawa
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Kazuo Takahashi
- Department of Aeronautics and Astronautics, Kyoto University, Japan
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SiO$_{2}$ and Si$_{3}$N$_{4}$ Etch Mechanisms in NF$_{3}$/C$_{2}$H$_{4}$ Plasma
ORAL
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Authors
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Puthajat Machima
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Noah Hershkowitz
- Department of Engineering Physics, University of Wisconsin-Madison
- Dept. of Engineering Physics, University of Wisconsin - Madison
- D
- University of Wisconsin-Madison
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Performance Tunable High-Frequency Inductively Coupled Plasma Technology in Application to Polysilicon Etcher and High Density Plasma CVD
ORAL
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Authors
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Jong W. Shon
- Ju Sung Engineering Ltd.
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GiChung Kwon
- JuSung Engineering Ltd.
- Jusung Engineering Corporation
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Hong Young Chang
- KAIST
- Korea Advanced Institute of Science and Technology
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