Control of rewriteable doping patterns in graphene/boron nitride heterostructures
ORAL
Abstract
Spatial control of charge doping in 2D materials is a promising technique for designing future electronic devices. Electrostatic gating and chemical doping are common methods to achieve control of charge doping in 2D materials. However, these approaches suffer from complicated fabrication processes that introduce impurities, change material properties irreversibly, and lack flexibility. Here, we introduce a new method for patterning rewriteable doping profiles with local interface charge transfer from defects in a tunable BN substrate into an adjacent layer of graphene. This will enable many novel device designs for 2D materials, including atomically thin p-n junctions and rewriteable memory devices.
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