Towards Measurements of Electroweak Nuclear Properties using Single Molecular Ions in a Penning Trap

ORAL

Abstract

We present the development of a novel Penning ion trap for precision spectroscopy of symmetry-violating electroweak properties using single trapped molecular ions [1]. The high magnetic field of the Penning trap can be used to Zeeman shift two molecular states of opposite parity to near degeneracy, enhancing the sensitivity of parity-violating nuclear properties by more than 12 orders of magnitude [1,2]. Hence, our proposed experimental setup is expected to provide highly sensitive measurements of symmetry-violating nuclear properties across the nuclear chart. This contribution will describe the status of a cryogenic Penning trap for performing measurements in SiO+ and TlF+ molecules, as well as discuss future prospects of this technique.

[1] J. Karthein, S. Udrescu, S. Moroch et al. arXiv:2310.11192 (2023)

[2] Altuntas, E. et al. Phys. Rev. Lett. 120, 142501 (2018)

*Department of Energy, Office of Science Nuclear Physics under the grants DE-SC0021176 and DE-SC0021179NSF Graduate Research FellowshipFannie and John Hertz Foundation Graduate Fellowship

Publication: J. Karthein, S. Udrescu, S. Moroch et al. arXiv:2310.11192 (2023) (accepted to PRL)

Presenters

  • Scott Moroch

    • Massachusetts Institute of Technology

Authors

  • Scott Moroch

    • Massachusetts Institute of Technology
  • Jonas Karthein

    • Massachusetts Institute of Technology
  • Ronald Fernando F Garcia Ruiz

    • MIT Laboratory for Nuclear Science
    • Massachusetts Institute of Technology
  • Silviu-Marian M Udrescu

    • Massachusetts Institute of Technology
  • Klaus Blaum

    • Max Planck Inst Kernphys
  • David P DeMille

    • University of Chicago, Argonne National Laboratory
    • University of Chicago
  • Nicholas R Hutzler

    • California Institute of Technology
  • Ryan Ringle

    • Facility for Rare Isotope Beams
  • Jens Dilling

    • Oak Ridge National Lab
  • Haruka Kakioka

    • Massachusetts Institute of Technology